Invention Grant
- Patent Title: Process tuning gas injection from the substrate edge
- Patent Title (中): 从基板边缘处理调整气体注入
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Application No.: US11359300Application Date: 2006-02-21
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Publication No.: US08097120B2Publication Date: 2012-01-17
- Inventor: Rajinder Dhindsa , Mukund Srinivasan
- Applicant: Rajinder Dhindsa , Mukund Srinivasan
- Applicant Address: US CA Fremont
- Assignee: Lam Research Corporation
- Current Assignee: Lam Research Corporation
- Current Assignee Address: US CA Fremont
- Agency: Martine Penilla Group, LLP
- Main IPC: C23C16/455
- IPC: C23C16/455 ; C23C16/50 ; C23C16/458 ; C23F1/00 ; H01L21/306 ; C23C16/06 ; C23C16/22
Abstract:
Broadly speaking, the embodiments of the present invention provides an improved plasma processing mechanism, apparatus, and method to increase the process uniformity at the very edge of the substrate. In one embodiment, a plasma processing chamber comprises a substrate support configured to receive a substrate, and a plurality of tuning gas injection holes surrounding the edge of the substrate, wherein the tuning gas injection holes supplies a tuning gas to the edge of the substrate during plasma processing of the substrate.
Public/Granted literature
- US20070193688A1 Process tuning gas injection from the substrate edge Public/Granted day:2007-08-23
Information query
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