Invention Grant
- Patent Title: Surface acoustic wave device and manufacturing method therefor, and communications equipment
- Patent Title (中): 声表面波装置及其制造方法及通信设备
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Application No.: US12055097Application Date: 2008-03-25
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Publication No.: US08097178B2Publication Date: 2012-01-17
- Inventor: Ikuo Obara , Daisuke Makibuchi , Kunihiko Muraoka , Kiyohiro Iioka
- Applicant: Ikuo Obara , Daisuke Makibuchi , Kunihiko Muraoka , Kiyohiro Iioka
- Applicant Address: JP Kyoto
- Assignee: Kyocera Corporation
- Current Assignee: Kyocera Corporation
- Current Assignee Address: JP Kyoto
- Agency: DLA Piper LLP (US)
- Priority: JP2004-249288 20040827
- Main IPC: B44C1/22
- IPC: B44C1/22 ; C03C15/00 ; C03C25/68 ; C23F1/00

Abstract:
A surface acoustic wave device configured by forming an oxide layer 2 on a piezoelectric substrate 1 composed of a lithium tantalate single crystal or a lithium niobate single crystal and having weak pyroelectric properties having a lower oxygen content than a stoichiometric composition ratio, and forming thereon an IDT electrode 3. There is no static destruction of a minute electrode due to the pyroelectric effect of the piezoelectric substrate having weak pyroelectric properties, and frequency characteristics are not degraded.
Public/Granted literature
- US20080179278A1 Surface Acoustic Wave Device and Manufacturing Method Therefor, and Communications Equipment Public/Granted day:2008-07-31
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