A method for abating effluent from an etching process in one embodiment includes advancing etch gas product into a passageway of a gas connector in direct fluid communication with a first chamber of an interior void of an apparatus, advancing a gas from a gas source into said passageway of said gas connector at the same time said etch gas product is being advanced into said passageway, and advancing humidified gas from a humidified gas source into a second chamber of said interior void.