Invention Grant
- Patent Title: Electrical insulation film manufacturing method
- Patent Title (中): 电绝缘膜制造方法
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Application No.: US11893277Application Date: 2007-08-15
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Publication No.: US08097301B2Publication Date: 2012-01-17
- Inventor: Tetsushi Ishikawa , Osamu Nakamura
- Applicant: Tetsushi Ishikawa , Osamu Nakamura
- Applicant Address: JP Tokyo
- Assignee: Casio Computer Co., Ltd.
- Current Assignee: Casio Computer Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz, Goodman & Chick PC
- Priority: JP2006-233849 20060830; JP2006-267832 20060929; JP2007-133587 20070521
- Main IPC: C23C16/40
- IPC: C23C16/40

Abstract:
A method of manufacturing an electrical insulation film includes (i) forming an R film containing at least one rare earth element R selected from the group including Sc, Y, La, Gd, Dy, Ho, Er, Tm, and Lu on at least a portion of a surface of a metal substrate where an electrical insulation property is needed, (ii) hydrogenating the R film under an inert gas atmosphere, which contains a hydrogen gas, to form an RH2 film; and (iii) oxidizing the RH2 film to form an R2O3 film.
Public/Granted literature
- US20080057196A1 Insulation film manufacturing method, reaction device, power generation device and electronic apparatus Public/Granted day:2008-03-06
Information query
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