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US08097302B2 Electroconductive tin oxide having high mobility and low electron concentration 有权
具有高迁移率和低电子浓度的导电氧化锡

Electroconductive tin oxide having high mobility and low electron concentration
Abstract:
Tin oxide having high mobility and a low electron concentration, and methods for producing layers of the tin oxide layers on a substrate by atmospheric pressure chemical vapor deposition (APCVD) are disclosed. The tin oxide may undoped polycrystalline n-type tin oxide or it may be doped polycrystalline p-type tin oxide. When the layer of tin oxide is formed on a crystalline substrate, substantially crystalline tin oxide is formed. Dopant precursors for producing doped p-type tin oxide are also disclosed.
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