Invention Grant
- Patent Title: Method of production of a contact structure
- Patent Title (中): 接触结构的制造方法
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Application No.: US12818503Application Date: 2010-06-18
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Publication No.: US08097475B2Publication Date: 2012-01-17
- Inventor: Tetsuya Kuitani , Tadao Saito , Yoshihiro Abe
- Applicant: Tetsuya Kuitani , Tadao Saito , Yoshihiro Abe
- Applicant Address: JP Tokyo
- Assignee: Advantest Corporation
- Current Assignee: Advantest Corporation
- Current Assignee Address: JP Tokyo
- Agency: Greenblum & Bernstein, P.L.C.
- Priority: WOPCT/JP2005/011748 20050627
- Main IPC: H01L21/66
- IPC: H01L21/66 ; H01L23/58
Abstract:
A probe card having a plurality of silicon finger contactors contacting pads provided on a tested semiconductor wafer and a probe board mounting the plurality of silicon finger contactors on its surface, wherein each silicon finger contactor has a base part on which a step difference is formed, a support part with a rear end side provided at the base part and with a front end side sticking out from the base part, and a conductive part formed on the surface of the support part, each silicon finger contactor mounted on the probe board so that an angle part of the step difference formed on the base part contacts the surface of the probe board.
Public/Granted literature
- US20100304559A1 METHOD OF PRODUCTION OF A CONTACT STRUCTURE Public/Granted day:2010-12-02
Information query
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