Invention Grant
US08097481B2 Growth of non-polar M-plane III-nitride film using metalorganic chemical vapor deposition (MOCVD)
有权
使用金属有机化学气相沉积（MOCVD）生长非极性M面III族氮化物膜
- Patent Title: Growth of non-polar M-plane III-nitride film using metalorganic chemical vapor deposition (MOCVD)
- Patent Title (中): 使用金属有机化学气相沉积（MOCVD）生长非极性M面III族氮化物膜
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Application No.: US11870115Application Date: 2007-10-10
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Publication No.: US08097481B2Publication Date: 2012-01-17
- Inventor: Bilge M. Imer , James S. Speck , Steven P. DenBaars , Shuji Nakamura
- Applicant: Bilge M. Imer , James S. Speck , Steven P. DenBaars , Shuji Nakamura
- Applicant Address: US CA Oakland JP Saitama Prefecture
- Assignee: The Regents of the University of California,Japan Science and Technology Agency
- Current Assignee: The Regents of the University of California,Japan Science and Technology Agency
- Current Assignee Address: US CA Oakland JP Saitama Prefecture
- Agency: Gates & Cooper LLP
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method of growing non-polar m-plane III-nitride film, such as GaN, AlN, AlGaN or InGaN, wherein the non-polar m-plane III-nitride film is grown on a suitable substrate, such as an m-SiC, m-GaN, LiGaO2 or LiAlO2 substrate, using metalorganic chemical vapor deposition (MOCVD). The method includes performing a solvent clean and acid dip of the substrate to remove oxide from the surface, annealing the substrate, growing a nucleation layer, such as aluminum nitride (AlN), on the annealed substrate, and growing the non-polar m-plane III-nitride film on the nucleation layer using MOCVD.
Public/Granted literature
- US20080026502A1 GROWTH OF NON-POLAR M-PLANE III-NITRIDE FILM USING METALORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD) Public/Granted day:2008-01-31
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