Invention Grant
US08097482B2 Method for manufacturing group III nitride semiconductor, method for manufacturing group III nitride semiconductor light-emitting device, group III nitride semiconductor light-emitting device, and lamp
有权
III族氮化物半导体的制造方法，III族氮化物半导体发光元件的制造方法，III族氮化物半导体发光元件及灯
- Patent Title: Method for manufacturing group III nitride semiconductor, method for manufacturing group III nitride semiconductor light-emitting device, group III nitride semiconductor light-emitting device, and lamp
- Patent Title (中): III族氮化物半导体的制造方法，III族氮化物半导体发光元件的制造方法，III族氮化物半导体发光元件及灯
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Application No.: US12438047Application Date: 2008-06-03
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Publication No.: US08097482B2Publication Date: 2012-01-17
- Inventor: Kenzo Hanawa , Yasumasa Sasaki , Hisayuki Miki
- Applicant: Kenzo Hanawa , Yasumasa Sasaki , Hisayuki Miki
- Applicant Address: JP Tokyo
- Assignee: Showa Denko K.K
- Current Assignee: Showa Denko K.K
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JP2007-154015 20070611
- International Application: PCT/JP2008/060206 WO 20080603
- International Announcement: WO2008/152944 WO 20081218
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L33/00
Abstract:
A method for manufacturing a Group III nitride semiconductor of the present invention, comprising a sputtering step for disposing a substrate and a target in a chamber and forming a Mg-doped Group III nitride semiconductor on the substrate by a reactive sputtering method, wherein the sputtering step includes respective substeps of: a film formation step for forming a semiconductor thin film while doping with Mg; and a plasma treatment step for applying an inert gas plasma treatment to the semiconductor thin film that has been formed in the film formation step, and the Group III nitride semiconductor is formed by laminating the semiconductor thin film through alternate repetitions of the film formation step and the plasma treatment step.
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