Invention Grant
- Patent Title: Chip structure having redistribution layer and fabrication method thereof
- Patent Title (中): 具有再分布层的芯片结构及其制造方法
-
Application No.: US12962326Application Date: 2010-12-07
-
Publication No.: US08097491B1Publication Date: 2012-01-17
- Inventor: Hung-Yuan Hsu , Sui-An Kao
- Applicant: Hung-Yuan Hsu , Sui-An Kao
- Applicant Address: TW Taichung
- Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee Address: TW Taichung
- Agency: Edwards Wildman Palmer LLP
- Agent Peter F. Corless; Steven M. Jensen
- Priority: TW99132146A 20100923
- Main IPC: H01L21/50
- IPC: H01L21/50 ; H01L21/48 ; H01L21/44

Abstract:
A chip structure having a redistribution layer includes: a chip with electrode pads disposed on an active surface thereof; a first passivation layer formed on the active surface and the electrode pads; a redistribution layer formed on the first passivation layer and having a plurality of wiring units, wherein each of the wiring units has a conductive pad, a conductive via and a conductive trace connecting the conductive pad and the conductive via, the conductive trace having at least a first through opening for exposing a portion of the first passivation layer; and a second passivation layer disposed on the first passivation layer and the redistribution layer, the second passivation layer being filled in the first through opening such that the first and second passivation layers are bonded to each other with the conductive trace sandwiched therebetween, thereby preventing delamination of the conductive trace from the second passivation layer.
Information query
IPC分类: