Invention Grant
- Patent Title: Method and apparatus for fabricating a high-performance band-edge complementary metal-oxide-semiconductor device
- Patent Title (中): 用于制造高性能带边互补金属氧化物半导体器件的方法和装置
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Application No.: US12013846Application Date: 2008-01-14
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Publication No.: US08097500B2Publication Date: 2012-01-17
- Inventor: Takashi Ando , Eduard A. Cartier , Changhwan Choi , Elizabeth A. Duch , Bruce B. Doris , Young-Hee Kim , Vijay Narayanan , James Pan , Vamsi K. Paruchuri
- Applicant: Takashi Ando , Eduard A. Cartier , Changhwan Choi , Elizabeth A. Duch , Bruce B. Doris , Young-Hee Kim , Vijay Narayanan , James Pan , Vamsi K. Paruchuri
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
In one embodiment, the invention is a method and apparatus for fabricating a high-performance band-edge complementary metal-oxide-semiconductor device. One embodiment of a method for fabricating a complementary metal-oxide-semiconductor device includes fabricating an n-type metal-oxide-semiconductor device using a gate first process, and fabricating a p-type metal-oxide-semiconductor device using a gate last process.
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