Invention Grant
- Patent Title: Method for an integrated circuit contact
- Patent Title (中): 集成电路接触方法
-
Application No.: US12565280Application Date: 2009-09-23
-
Publication No.: US08097514B2Publication Date: 2012-01-17
- Inventor: Charles H. Dennison , Trung T. Doan
- Applicant: Charles H. Dennison , Trung T. Doan
- Applicant Address: US NY Mt. Kisco
- Assignee: Round Rock Research, LLC
- Current Assignee: Round Rock Research, LLC
- Current Assignee Address: US NY Mt. Kisco
- Agency: Lerner, David, Littenberg, Krumholz & Mentlik, LLP
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
A support material for a semiconductor device is processed. An opening having a width is etched into the support material for the semiconductor device using a first etch mask. A portion of the opening is etched using a second etch mask without alignment thereof to the width of the opening.
Public/Granted literature
- US20100019388A1 METHOD FOR AN INTEGRATED CIRCUIT CONTACT Public/Granted day:2010-01-28
Information query
IPC分类:
