Invention Grant
US08097528B2 Manufacturing method of nitride substrate, nitride substrate, and nitride-based semiconductor device
失效
氮化物衬底，氮化物衬底和氮化物基半导体器件的制造方法
- Patent Title: Manufacturing method of nitride substrate, nitride substrate, and nitride-based semiconductor device
- Patent Title (中): 氮化物衬底，氮化物衬底和氮化物基半导体器件的制造方法
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Application No.: US12711507Application Date: 2010-02-24
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Publication No.: US08097528B2Publication Date: 2012-01-17
- Inventor: Takuji Okahisa , Hideaki Nakahata , Koji Uematsu
- Applicant: Takuji Okahisa , Hideaki Nakahata , Koji Uematsu
- Applicant Address: JP Osaka-shi
- Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee: Sumitomo Electric Industries, Ltd.
- Current Assignee Address: JP Osaka-shi
- Agency: Drinker Biddle & Reath LLP
- Priority: JP2006-008287 20060117
- Main IPC: H01L21/20
- IPC: H01L21/20
Abstract:
A manufacturing method of a nitride substrate includes the steps of: preparing a ground substrate; forming a mask on the ground substrate; placing the ground substrate in a reactor, and heating the ground substrate to a temperature of 850° C. to 1100° C. In the step of heating the ground substrate, HCl and NH3 are supplied into the reactor so that partial pressure PHCl satisfies (1.5+0.0005p) kPa≦PHCl≦(4+0.0005p) kPa and partial pressure PNH3 satisfies (15−0.0009p) kPa≦PNH3≦(26−0.0017p) kPa, whereby an AlxGayIn1-x-yN crystal (0≦x
Public/Granted literature
- US20100155902A1 Manufacturing Method of Nitride Substrate, Nitride Substrate, and Nitride-Based Semiconductor Device Public/Granted day:2010-06-24
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