Invention Grant
- Patent Title: Method of manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US12715727Application Date: 2010-03-02
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Publication No.: US08097538B2Publication Date: 2012-01-17
- Inventor: Tatsuhiko Koide , Hisashi Okuchi , Hidekazu Hayashi , Hiroshi Tomita
- Applicant: Tatsuhiko Koide , Hisashi Okuchi , Hidekazu Hayashi , Hiroshi Tomita
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2009-100850 20090417
- Main IPC: H01L21/461
- IPC: H01L21/461
Abstract:
A metal member layer on a silicon member layer is patterned. A sidewall film is formed on a surface of the metal member layer. The silicon member layer is patterned to form a structure including the silicon member layer and the metal member layer, the surface of which is covered with the sidewall film. After the surface of the structure is cleaned, a water-repellent protective film is formed on the surface of the structure before the surface of the structure is dried.
Public/Granted literature
- US20100267233A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2010-10-21
Information query
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