Invention Grant
- Patent Title: Method of opening pad in semiconductor device
- Patent Title (中): 在半导体器件中打开焊盘的方法
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Application No.: US12330635Application Date: 2008-12-09
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Publication No.: US08097540B2Publication Date: 2012-01-17
- Inventor: Dae-Heok Kwon
- Applicant: Dae-Heok Kwon
- Applicant Address: KR Seoul
- Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee: Dongbu HiTek Co., Ltd.
- Current Assignee Address: KR Seoul
- Agency: Sherr & Vaughn, PLLC
- Priority: KR10-2007-0128635 20071212
- Main IPC: H01L21/302
- IPC: H01L21/302 ; H01L21/461

Abstract:
A method of opening a pad in a semiconductor device. A protective film on a pad may be etched with a pad opening pattern as a mask. Dielectric heating may be performed on the pad opened by etching the protective film. Organic material containing C and F groups on the pad may be removed by heating with molecular vibration and/or microwaves, which may substantially prevent and/or minimize corrosion.
Public/Granted literature
- US20090152687A1 METHOD OF OPENING PAD IN SEMICONDUCTOR DEVICE Public/Granted day:2009-06-18
Information query
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