Invention Grant
US08097547B2 Sintered refactory material based on silicon carbide with a silicon nitride binder
有权
基于碳化硅与氮化硅粘合剂的烧结的重构材料
- Patent Title: Sintered refactory material based on silicon carbide with a silicon nitride binder
- Patent Title (中): 基于碳化硅与氮化硅粘合剂的烧结的重构材料
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Application No.: US12028202Application Date: 2008-02-08
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Publication No.: US08097547B2Publication Date: 2012-01-17
- Inventor: Eric Jorge , Olivier Marguin , Lionel Moitrier , Olivier Citti
- Applicant: Eric Jorge , Olivier Marguin , Lionel Moitrier , Olivier Citti
- Applicant Address: FR Courbevoie
- Assignee: Saint-Gobain Centre de Recherches et d'Etudes Europeen
- Current Assignee: Saint-Gobain Centre de Recherches et d'Etudes Europeen
- Current Assignee Address: FR Courbevoie
- Agency: Young & Thompson
- Priority: FR0412627 20041129
- Main IPC: C04B35/567
- IPC: C04B35/567 ; C04B35/586
Abstract:
A sintered material based on silicon carbide (SiC) reactively sintered between 1,100° C. and 1,700° C. to form a silicon nitride binder (Si3N4), intended in particular for fabricating an aluminum electrolysis cell, including 0.05% to 1.5% of boron, the Si3N4/SiC weight ratio being in the range 0.05 to 0.45.
Public/Granted literature
- US20080234122A1 A SINTERED REFACTORY MATERIAL BASED ON SILICON CARBIDE WITH A SILICON NITRIDE BINDER Public/Granted day:2008-09-25
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