Invention Grant
- Patent Title: Thermoelectric material including a multiple transition metal-doped type I clathrate crystal structure
- Patent Title (中): 包括多过渡金属掺杂I型包合物晶体结构的热电材料
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Application No.: US12434333Application Date: 2009-05-01
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Publication No.: US08097802B2Publication Date: 2012-01-17
- Inventor: Jihui Yang , Xun Shi , Shengqiang Bai , Wenqing Zhang , Lidong Chen , Jiong Yang
- Applicant: Jihui Yang , Xun Shi , Shengqiang Bai , Wenqing Zhang , Lidong Chen , Jiong Yang
- Applicant Address: US MI Detroit
- Assignee: GM Global Technology Operations LLC
- Current Assignee: GM Global Technology Operations LLC
- Current Assignee Address: US MI Detroit
- Agency: Dierker & Associates, P.C.
- Main IPC: H01L35/12
- IPC: H01L35/12 ; H01L35/00 ; H01B1/02 ; H01L35/30
Abstract:
A thermoelectric material includes a multiple transition metal-doped type I clathrate crystal structure having the formula A8TMy11TMy22 . . . TMynnMzX46-y1-y2- . . . -yn-z. In the formula, A is selected from the group consisting of barium, strontium, and europium; X is selected from the group consisting of silicon, germanium, and tin; M is selected from the group consisting of aluminum, gallium, and indium; TM1, TM2, and TMn are independently selected from the group consisting of 3d, 4d, and 5d transition metals; and y1, y2, yn and Z are actual compositions of TM1, TM2, TMn, and M, respectively. The actual compositions are based upon nominal compositions derived from the following equation: z=8·qA−|Δq1|y1−|Δq2|y2− . . . −|Δqn|yn, wherein qA is a charge state of A, and wherein Δq1, Δq2, Δqn are, respectively, the nominal charge state of the first, second, and n-th TM.
Public/Granted literature
- US20100275963A1 THERMOELECTRIC MATERIAL INCLUDING A MULTIPLE TRANSITION METAL-DOPED TYPE I CLATHRATE CRYSTAL STRUCTURE Public/Granted day:2010-11-04
Information query
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