Invention Grant
- Patent Title: Modifiable gate stack memory element
- Patent Title (中): 可修改的门堆栈存储元件
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Application No.: US11708664Application Date: 2007-02-20
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Publication No.: US08097872B2Publication Date: 2012-01-17
- Inventor: Franz Kreupl
- Applicant: Franz Kreupl
- Applicant Address: US TX Austin
- Assignee: Rising Silicon, Inc.
- Current Assignee: Rising Silicon, Inc.
- Current Assignee Address: US TX Austin
- Agency: Marger Johnson & McCollom, P.C.
- Main IPC: H01L29/04
- IPC: H01L29/04
Abstract:
An apparatus and method for storing information are provided, including using an integrated circuit including a transistor having a channel, a gate oxide layer, a gate electrode, and a modifiable gate stack layer. To store information, the on-resistance of the transistor is changed by causing a non-charge-storage based physical change in the modifiable gate stack layer.
Public/Granted literature
- US20080101121A1 Modifiable gate stack memory element Public/Granted day:2008-05-01
Information query
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