The present invention relates to a light emitting diode (100, 109), comprising at least one p-doped structure, a plurality of n-doped zinc-oxide (ZnO) nanowires (104) arranged on the at least one p-doped structure, thereby forming a plurality of p-n junctions (107a, 107b), an insulating structure (105) arranged among the plurality of ZnO-nanowires (104), to electrically separate the plurality of p-n junctions (107a, 107b), and a transparent conductive layer (106), arranged on the at least one insulating structure (105) and in electrical contact with the plurality of ZnO-nanowires (104), to enable application of a voltage over the plurality of p-n junctions (107a, 107b), thereby enabling emission of light. An advantage with the above light emitting diode (100, 109) is its improved broadband spectral distribution. Furthermore, as ZnO-nanowires (104) are used, it is possible to achieve a high brightness.