Invention Grant
- Patent Title: Compound semiconductor film, light emitting film, and manufacturing method thereof
- Patent Title (中): 化合物半导体膜，发光膜及其制造方法
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Application No.: US12127766Application Date: 2008-05-27
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Publication No.: US08097885B2Publication Date: 2012-01-17
- Inventor: Tomoyuki Oike , Tatsuya Iwasaki
- Applicant: Tomoyuki Oike , Tatsuya Iwasaki
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Fitzpatrick, Cella, Harper & Scinto
- Priority: JP2007-154035 20070611
- Main IPC: H01L29/15
- IPC: H01L29/15
Abstract:
Provided are a compound semiconductor film which is manufactured at a low temperature and exhibits excellent p-type conductivity, and a light emitting film in which the compound semiconductor film and a light emitting material are laminated and with which high-intensity light emission can be realized. The compound semiconductor film has a composition represented by a Cu2—Zn—IV—S4 type, in which the IV is at least one of Ge and Si. The light emitting film includes the light emitting material and the compound semiconductor film laminated on a substrate in the stated order.
Public/Granted literature
- US20080303035A1 COMPOUND SEMICONDUCTOR FILM, LIGHT EMITTING FILM, AND MANUFACTURING METHOD THEREOF Public/Granted day:2008-12-11
Information query
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