Invention Grant
US08097902B2 Programmable metallization memory cells via selective channel forming
有权
可编程金属化存储单元通过选择性通道形成
- Patent Title: Programmable metallization memory cells via selective channel forming
- Patent Title (中): 可编程金属化存储单元通过选择性通道形成
-
Application No.: US12170519Application Date: 2008-07-10
-
Publication No.: US08097902B2Publication Date: 2012-01-17
- Inventor: Haiwen Xi , Ming Sun , Dexin Wang , Shuiyuan Huang , Michael Tang , Song S. Xue
- Applicant: Haiwen Xi , Ming Sun , Dexin Wang , Shuiyuan Huang , Michael Tang , Song S. Xue
- Applicant Address: US CA Scotts Valley
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Scotts Valley
- Agency: Mueting Raasch & Gebhardt PA
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A programmable metallization memory cell that has an apertured insulating layer comprising at least one aperture therethrough positioned between the active electrode and the inert electrode. Superionic clusters are present within the at least one aperture, and may extend past the at least one aperture. Also, methods for making a programmable metallization memory cell are disclosed.
Public/Granted literature
- US20100006813A1 PROGRAMMABLE METALLIZATION MEMORY CELLS VIA SELECTIVE CHANNEL FORMING Public/Granted day:2010-01-14
Information query
IPC分类:
