Invention Grant
US08097916B2 Method for insulating a semiconducting material in a trench from a substrate
有权
一种从衬底将沟槽中的半导体材料绝缘的方法
- Patent Title: Method for insulating a semiconducting material in a trench from a substrate
- Patent Title (中): 一种从衬底将沟槽中的半导体材料绝缘的方法
-
Application No.: US11781582Application Date: 2007-07-23
-
Publication No.: US08097916B2Publication Date: 2012-01-17
- Inventor: Martin Poelzl
- Applicant: Martin Poelzl
- Applicant Address: AT Villach
- Assignee: Infineon Technologies Austria AG
- Current Assignee: Infineon Technologies Austria AG
- Current Assignee Address: AT Villach
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L29/66
- IPC: H01L29/66
Abstract:
A method for insulating a semiconducting material in a trench from a substrate, wherein the trench is formed in the substrate and comprising an upper portion and a lower portion, the lower portion being lined with a first insulating layer and filled, at least partially, with a semiconducting material, comprises an isotropic etching of the substrate and the semiconducting material, and forming a second insulating layer in the trench, wherein the second insulating layer covers, at least partially, the substrate and the semiconducting material.
Public/Granted literature
- US20090026531A1 METHOD FOR INSULATING A SEMICONDUCTING MATERIAL IN A TRENCH FROM A SUBSTRATE Public/Granted day:2009-01-29
Information query
IPC分类:
