Invention Grant
- Patent Title: Highly sensitive photo-sensing element and photo-sensing device using the same
- Patent Title (中): 高灵敏度感光元件和使用其的感光元件
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Application No.: US12000402Application Date: 2007-12-12
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Publication No.: US08097927B2Publication Date: 2012-01-17
- Inventor: Mitsuharu Tai , Toshio Miyazawa
- Applicant: Mitsuharu Tai , Toshio Miyazawa
- Applicant Address: JP Chiba
- Assignee: Hitachi Displays, Ltd.
- Current Assignee: Hitachi Displays, Ltd.
- Current Assignee Address: JP Chiba
- Agency: Stites & Harbison PLLC
- Agent Juan Carlos A. Marquez, Esq.
- Priority: JP2007-001303 20070109
- Main IPC: H01L27/14
- IPC: H01L27/14

Abstract:
The present invention provides an image display unit integrated with a photo-sensor, comprising a photo-sensing element with high sensitivity and low noise and a polycrystalline silicon TFT prepared at the same time on an insulating substrate using planer process. After a first electrode 11 and a second electrode 12 of the photo-sensing element are made of polycrystalline silicon film, a light receiving layer (photoelectric conversion layer) 13 of the photo-sensing element is prepared by amorphous silicon film on upper layer. In this case, a polycrystalline silicon TFT is prepared at the same time.
Public/Granted literature
- US20080164473A1 Highly sensitive photo-sensing element and photo-sensing device using the same Public/Granted day:2008-07-10
Information query
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