In an embodiment, a semiconductor device is provided. The semiconductor device may include a first diffusion region, a second diffusion region an active region disposed between the first diffusion region and the second diffusion region, a control region disposed above the active region, a first trench isolation disposed laterally adjacent to the first diffusion region opposite to the active region, and a second trench isolation disposed between the second diffusion region and the active region. The second trench isolation may have a smaller depth than the first trench isolation.