Invention Grant
US08097941B2 Semiconductor device having projecting electrode formed by electrolytic plating, and manufacturing method thereof 有权
具有通过电解电镀形成的突起电极的半导体装置及其制造方法

Semiconductor device having projecting electrode formed by electrolytic plating, and manufacturing method thereof
Abstract:
A semiconductor device includes a semiconductor substrate, and a plurality of wiring lines provided on one side of the semiconductor substrate, each of the wiring lines having a connection pad portion. An overcoat film is provided on the wiring lines and the one side of the semiconductor substrate. The overcoat film has a plurality of openings in parts corresponding to the connection pad portions of the wiring lines. A plurality of foundation metal layers are respectively provided on inner surfaces of the openings of the overcoat film and electrically connected to the pat portions of the wiring lines. A plurality of projecting electrodes are respectively provided on the foundation metal layers in the openings of the overcoat film.
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