Invention Grant
- Patent Title: Semiconductor device having projecting electrode formed by electrolytic plating, and manufacturing method thereof
- Patent Title (中): 具有通过电解电镀形成的突起电极的半导体装置及其制造方法
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Application No.: US12566423Application Date: 2009-09-24
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Publication No.: US08097941B2Publication Date: 2012-01-17
- Inventor: Norihiko Kaneko
- Applicant: Norihiko Kaneko
- Applicant Address: JP Tokyo
- Assignee: Casio Computer Co., Ltd.
- Current Assignee: Casio Computer Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Holtz, Holtz, Goodman & Chick, PC
- Priority: JP2006-302633 20061108
- Main IPC: H01L23/02
- IPC: H01L23/02

Abstract:
A semiconductor device includes a semiconductor substrate, and a plurality of wiring lines provided on one side of the semiconductor substrate, each of the wiring lines having a connection pad portion. An overcoat film is provided on the wiring lines and the one side of the semiconductor substrate. The overcoat film has a plurality of openings in parts corresponding to the connection pad portions of the wiring lines. A plurality of foundation metal layers are respectively provided on inner surfaces of the openings of the overcoat film and electrically connected to the pat portions of the wiring lines. A plurality of projecting electrodes are respectively provided on the foundation metal layers in the openings of the overcoat film.
Public/Granted literature
Information query
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