Semiconductor device including first and second carriers

Invention Grant

US08097959B2 Semiconductor device including first and second carriers 有权

Title translation: 半导体器件包括第一和第二载体

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Patent Title: Semiconductor device including first and second carriers
Patent Title (中): 半导体器件包括第一和第二载体
Application No.: US12906279

Application Date: 2010-10-18
Publication No.: US08097959B2

Publication Date: 2012-01-17
Inventor: Stefan Landau , Joachim Mahler , Thomas Wowra
Applicant: Stefan Landau , Joachim Mahler , Thomas Wowra
Applicant Address: DE Neubiberg
Assignee: Infineon Technologies AG
Current Assignee: Infineon Technologies AG
Current Assignee Address: DE Neubiberg
Agency: Dicke, Billig & Czaja, PLLC
Main IPC: H01L21/40
IPC: H01L21/40

Semiconductor device including first and second carriers

Abstract:

A semiconductor device and method. One embodiment provides an integral array of first carriers and an integral array of second carries connected to the integral array of first carriers. First semiconductor chips are arranged on the integral array of first carriers. The integral array of second carriers is arranged over the first semiconductor chips.

Abstract(Chinese):

半导体器件和方法。一个实施例提供了第一载体的整体阵列和连接到第一载体的整体阵列的第二载体的整体阵列。第一半导体芯片布置在第一载体的整体阵列上。第二载体的整体阵列布置在第一半导体芯片上。

Public/Granted literature

US20110031597A1 SEMICONDUCTOR DEVICE AND METHOD INCLUDING FIRST AND SECOND CARRIERS Public/Granted day:2011-02-10

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00	专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/02	.半导体器件或其部件的制造或处理
H01L21/04	..至少具有一个跃变势垒或表面势垒的器件，例如PN结、耗尽层、载体集结层
H01L21/34	...具有H01L21/06，H01L21/16及H01L21/18各组不包含的或有或无杂质，例如掺杂材料的半导体的器件
H01L21/40	....杂质材料，例如掺杂材料，电极材料与半导体的合金