Invention Grant
- Patent Title: IC having TSV arrays with reduced TSV induced stress
- Patent Title (中): IC具有减少TSV诱导应力的TSV阵列
-
Application No.: US12648871Application Date: 2009-12-29
-
Publication No.: US08097964B2Publication Date: 2012-01-17
- Inventor: Jeffrey Alan West , Margaret Rose Simmons-Matthews , Masazumi Amagai
- Applicant: Jeffrey Alan West , Margaret Rose Simmons-Matthews , Masazumi Amagai
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Steven A. Shaw; W. James Brady; Frederick J. Telecky, Jr.
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40

Abstract:
An integrated circuit (IC) includes a substrate having a top side having active circuitry thereon including a plurality of metal interconnect levels including a first metal interconnect level and a top metal interconnect level, and a bottom side. At least one TSV array includes a plurality of TSVs. The TSVs are positioned in rows including a plurality of interior rows and a pair of exterior rows and a plurality of columns including a plurality of interior columns and a pair of exterior columns. At least a portion of the TSVs in the array are electrically connected TSVs that are coupled to a TSV terminating metal interconnect level selected from the plurality of metal interconnect levels. At least one of the exterior rows or exterior columns include a lower number of electrically connected TSVs compared to a maximum number of electrically connected TSVs in the interior rows and interior columns, respectively.
Public/Granted literature
- US20100171226A1 IC HAVING TSV ARRAYS WITH REDUCED TSV INDUCED STRESS Public/Granted day:2010-07-08
Information query
IPC分类: