Invention Grant
- Patent Title: Plasma generating apparatus and plasma generating method
- Patent Title (中): 等离子体发生装置和等离子体产生方法
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Application No.: US12294531Application Date: 2007-03-29
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Publication No.: US08098016B2Publication Date: 2012-01-17
- Inventor: Yasunari Mori
- Applicant: Yasunari Mori
- Applicant Address: JP Tokyo
- Assignee: Mitsui Engineering & Shipbuilding Co., Ltd.
- Current Assignee: Mitsui Engineering & Shipbuilding Co., Ltd.
- Current Assignee Address: JP Tokyo
- Agency: Whitham Curtis Christofferson & Cook, PC
- Priority: JP2006-090404 20060329
- International Application: PCT/JP2007/056857 WO 20070329
- International Announcement: WO2007/114247 WO 20071011
- Main IPC: H01J7/24
- IPC: H01J7/24

Abstract:
An impedance matching device is provided with a basic element having variable characteristic parameters for impedance matching, and an auxiliary element having variable characteristic parameters. At the time of generating plasma by using the impedance matching device, the characteristic parameters of the basic element of each antenna element are fixed, respectively, and the characteristic parameters of the auxiliary element are adjusted for each antenna element. Thus, in an adjusted status where impedance matching for each antenna element is adjusted, each antenna element of an antenna array is fed with a high frequency signal, an electromagnetic wave is radiated from the antenna element, the characteristic parameters of the basic element of each antenna element are synchronized and adjusted, and the impedances of the whole antenna array are matched.
Public/Granted literature
- US20100236917A1 PLASMA GENERATING APPARATUS AND PLASMA GENERATING METHOD Public/Granted day:2010-09-23
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