Invention Grant
- Patent Title: Reverse set with current limit for non-volatile storage
- Patent Title (中): 反向设置为非易失性存储的电流限制
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Application No.: US12963540Application Date: 2010-12-08
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Publication No.: US08098511B2Publication Date: 2012-01-17
- Inventor: Roy E. Scheuerlein , Tianhong Yan
- Applicant: Roy E. Scheuerlein , Tianhong Yan
- Applicant Address: US CA Milpitas
- Assignee: SanDisk 3D LLC
- Current Assignee: SanDisk 3D LLC
- Current Assignee Address: US CA Milpitas
- Agency: Vierra Magen Marcus & DeNiro LLP
- Main IPC: G11C11/00
- IPC: G11C11/00
Abstract:
A storage system includes a substrate, control circuitry on the substrate, a three dimensional memory array (above the substrate) that includes a plurality of reversible resistance-switching elements, and circuits for limiting the SET current for the reversible resistance-switching elements. The memory cell is SET in a reverse biased fashion.
Public/Granted literature
- US20110075468A1 REVERSE SET WITH CURRENT LIMIT FOR NON-VOLATILE STORAGE Public/Granted day:2011-03-31
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