Invention Grant
US08098520B2 Storage device including a memory cell having multiple memory layers
有权
存储装置包括具有多个存储层的存储单元
- Patent Title: Storage device including a memory cell having multiple memory layers
- Patent Title (中): 存储装置包括具有多个存储层的存储单元
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Application No.: US12110099Application Date: 2008-04-25
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Publication No.: US08098520B2Publication Date: 2012-01-17
- Inventor: Michael Seigler , Oleg Mryasov
- Applicant: Michael Seigler , Oleg Mryasov
- Applicant Address: US CA Scotts Valley
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Scotts Valley
- Agency: Mueting Raasch & Gebhardt PA
- Main IPC: G11C11/15
- IPC: G11C11/15
Abstract:
In a particular illustrative embodiment, a storage device includes a controller and a plurality of resistive elementary memory cells accessible via the controller. Each resistive elementary memory cell of the plurality of resistive elementary memory cells includes a plurality of memory layers selected to have hysteretic properties to store multiple data values.
Public/Granted literature
- US20090268506A1 STORAGE DEVICE INCLUDING A MEMORY CELL HAVING MULTIPLE MEMORY LAYERS Public/Granted day:2009-10-29
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