Invention Grant
US08098532B2 Non-volatile semiconductor storage device with address search circuit used when writing
有权
写入时使用地址搜索电路的非易失性半导体存储器件
- Patent Title: Non-volatile semiconductor storage device with address search circuit used when writing
- Patent Title (中): 写入时使用地址搜索电路的非易失性半导体存储器件
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Application No.: US12273813Application Date: 2008-11-19
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Publication No.: US08098532B2Publication Date: 2012-01-17
- Inventor: Yuji Komine , Shinya Fujisawa , Yasuhiko Honda , Ryu Hondai , Takamichi Kasai , Takahiro Suzuki
- Applicant: Yuji Komine , Shinya Fujisawa , Yasuhiko Honda , Ryu Hondai , Takamichi Kasai , Takahiro Suzuki
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2007-300800 20071120; JP2008-162189 20080620
- Main IPC: G11C7/10
- IPC: G11C7/10

Abstract:
A non-volatile semiconductor storage device includes a memory cell array having a plurality of non-volatile memory cells, an address search circuit which searches for write object data and outputs an address where the write object data is present, when writing data into the non-volatile memory cells, and a control circuit which exercises control to write the write object data into the non-volatile memory cells in accordance with the address output from the address search circuit.
Public/Granted literature
- US20090129156A1 NON-VOLATILE SEMICONDUCTOR STORAGE DEVICE Public/Granted day:2009-05-21
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