Invention Grant
US08098539B2 Hybrid single and dual channel DDR interface scheme by interleaving address/control signals during dual channel operation 有权
混合单通道和双通道DDR接口方案通过在双通道操作期间交织地址/控制信号

  • Patent Title: Hybrid single and dual channel DDR interface scheme by interleaving address/control signals during dual channel operation
  • Patent Title (中): 混合单通道和双通道DDR接口方案通过在双通道操作期间交织地址/控制信号
  • Application No.: US12547578
    Application Date: 2009-08-26
  • Publication No.: US08098539B2
    Publication Date: 2012-01-17
  • Inventor: Raghu SankuratriMichael DropJian Mao
  • Applicant: Raghu SankuratriMichael DropJian Mao
  • Applicant Address: US CA San Diego
  • Assignee: QUALCOMM Incorporated
  • Current Assignee: QUALCOMM Incorporated
  • Current Assignee Address: US CA San Diego
  • Agent Nicholas J. Pauley; Peter M. Kamarchik; Jonathan T. Velasco
  • Main IPC: G11C8/00
  • IPC: G11C8/00
Hybrid single and dual channel DDR interface scheme by interleaving address/control signals during dual channel operation
Abstract:
A memory structure is described. In one embodiment, the memory structure comprises a memory controller configured to receive a clock signal and to be coupled to a plurality of memory modules via a single address/control bus. The memory controller couples to each of the plurality of memory modules via a separate chip select signal for each memory module. The memory controller issues commands across the address/control bus to the memory modules in an interleaved fashion in accordance with the timing supplied by the clock. During a waiting period after issuance of a command to one memory module, the memory controller can issue commands to a different memory module.
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