Invention Grant
US08098898B2 Motion detection device, MOS (metal-oxide semiconductor) integrated circuit, and video system
有权
运动检测装置，MOS（金属氧化物半导体）集成电路和视频系统
- Patent Title: Motion detection device, MOS (metal-oxide semiconductor) integrated circuit, and video system
- Patent Title (中): 运动检测装置，MOS（金属氧化物半导体）集成电路和视频系统
-
Application No.: US11907167Application Date: 2007-10-10
-
Publication No.: US08098898B2Publication Date: 2012-01-17
- Inventor: Yoshihisa Shimazu , Shinji Kitamura
- Applicant: Yoshihisa Shimazu , Shinji Kitamura
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: McDermott Will & Emery LLP
- Priority: JP2006-293102 20061027
- Main IPC: G06K9/00
- IPC: G06K9/00
Abstract:
A motion detection device includes a current image memory, a reference image memory, a reference image memory control section, and a motion detection section. When the motion detection section detects a motion vector for a first current macroblock image, the reference image memory control section determines a motion estimation range by using a surrounding motion vector being a motion vector detected for a current macroblock image present around the first current macroblock.
Public/Granted literature
- US20080192985A1 Motion detection device, MOS (metal-oxide semiconductor) integrated circuit, and video system Public/Granted day:2008-08-14
Information query
