Invention Grant
- Patent Title: Circuit design
- Patent Title (中): 电路设计
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Application No.: US11985961Application Date: 2007-11-19
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Publication No.: US08099688B2Publication Date: 2012-01-17
- Inventor: Wayne F. Ellis , Randy W. Mann , David J. Wager , Robert C. Wong
- Applicant: Wayne F. Ellis , Randy W. Mann , David J. Wager , Robert C. Wong
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Joseph P. Abate; Howard M. Cohn
- Main IPC: G06F17/50
- IPC: G06F17/50

Abstract:
A design process includes inputting a design file representing a circuit design embodied in a non-transitory computer-readable medium, and using a computer to translate the circuit design into a netlist. The netlist comprises a representation of a plurality of wires, transistors, and logic gates, and is stored in the non-transitory computer-readable medium. When executed by the computer, the netlist produces the circuit design. The circuit design comprises a static random access memory (“SRAM”) including a plurality of SRAM cells arranged in an array, including a plurality of rows and a plurality of columns, and a plurality of column voltage control circuits corresponding to respective ones of the plurality of columns of the array. Each of the plurality of voltage control circuits is coupled to an output of a power supply and is operable to temporarily reduce a voltage upon arrival of a bit select signal provided to power supply inputs of a plurality of SRAM cells belonging to a selected column of the plurality of columns. The selected column is selected during a write operation in which a bit is written to one of the plurality of SRAM cells belonging to the selected column. Each column voltage control circuit includes an NFET and a pair of PFETs. Each NFET and pair of PFETs has a conduction path directly connected between the output of the power supply and the power supply inputs of the plurality of SRAM cells.
Public/Granted literature
- US20090129191A1 Structure for SRAM voltage control for improved operational margins Public/Granted day:2009-05-21
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