Invention Grant
- Patent Title: Semiconductor device and electronic apparatus using the same
- Patent Title (中): 半导体装置及使用其的电子设备
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Application No.: US11354841Application Date: 2006-02-16
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Publication No.: US08106594B2Publication Date: 2012-01-31
- Inventor: Kiyoshi Kato , Takeshi Osada
- Applicant: Kiyoshi Kato , Takeshi Osada
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2005-055183 20050228
- Main IPC: G09G3/10
- IPC: G09G3/10
Abstract:
A semiconductor device with high function, multifunction and high added value. The semiconductor device includes a PLL circuit that is provided over a substrate and outputs a signal with a correct frequency. By providing such a PLL circuit over the substrate, a semiconductor device with high function, multifunction and high added value can be achieved.
Public/Granted literature
- US20060192229A1 Semiconductor device and electronic apparatus using the same Public/Granted day:2006-08-31
Information query
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