A method of pattern forming includes forming a resist film on a substrate, transferring a pattern onto the resist film by an immersion lithography method using a liquid immersion fluid to form a latent image on the resist film, conducting a first inspection to inspect whether or not the liquid immersion fluid remains on the resist film after said forming the latent image, developing the resist film after the first inspection, and performing predetermined processing when residual of the liquid immersion fluid is found in the first inspection.