Invention Grant
- Patent Title: Three dimensional hexagonal matrix memory array
- Patent Title (中): 三维六边形矩阵记忆阵列
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Application No.: US12801504Application Date: 2010-06-11
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Publication No.: US08107270B2Publication Date: 2012-01-31
- Inventor: Roy E. Scheuerlein , Christopher J. Petti
- Applicant: Roy E. Scheuerlein , Christopher J. Petti
- Applicant Address: US CA Milpitas
- Assignee: SanDisk 3D LLC
- Current Assignee: SanDisk 3D LLC
- Current Assignee Address: US CA Milpitas
- Agency: The Marbury Law Group, PLLC
- Main IPC: G11C5/02
- IPC: G11C5/02

Abstract:
A nonvolatile memory device includes a plurality of nonvolatile memory cells arranged in a substantially hexagonal pattern. The nonvolatile memory cells may be pillar shaped non-volatile memory cells which can be patterned using triple or quadruple exposure lithography or by using a self-assembling layer.
Public/Granted literature
- US20100290262A1 Three dimensional hexagonal matrix memory array Public/Granted day:2010-11-18
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