Invention Grant
- Patent Title: Electric field read/write head, method of manufacturing the same, and information storage device comprising electric field read/write head
- Patent Title (中): 电场读/写头,其制造方法以及包括电场读/写头的信息存储装置
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Application No.: US12038878Application Date: 2008-02-28
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Publication No.: US08107354B2Publication Date: 2012-01-31
- Inventor: Hyoung-soo Ko , Ju-hwan Jung , Seung-bum Hong , Chul-min Park , Dae-young Jeon
- Applicant: Hyoung-soo Ko , Ju-hwan Jung , Seung-bum Hong , Chul-min Park , Dae-young Jeon
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: Sughrue Mion, PLLC
- Priority: KR10-2007-0078208 20070803
- Main IPC: G11B5/187
- IPC: G11B5/187 ; G11B9/02

Abstract:
An electric field read/write head, a method of manufacturing the electric field read/write head, and an information storage device including the electric field read/write head are provided. The electric field read/write head includes: a substrate having a first surface facing a recording medium and a second surface that is perpendicular to the first surface; and a protrusion formed on the second surface and having at least a portion facing the recording medium, wherein a resistance sensor comprising a source, a drain, and a channel is included in the protrusion. An insulating layer and electric field shield layers are further sequentially formed on opposite sides of the protrusion, respectively, and at least one of the electric field shield layers is a write electrode.
Public/Granted literature
Information query
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