Invention Grant
- Patent Title: Self-supported film and silicon wafer obtained by sintering
- Patent Title (中): 通过烧结获得的自支撑膜和硅晶片
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Application No.: US12453509Application Date: 2009-05-13
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Publication No.: US08110285B2Publication Date: 2012-02-07
- Inventor: Jean-Paul Garandet , Béatrice Drevet , Luc Federzoni
- Applicant: Jean-Paul Garandet , Béatrice Drevet , Luc Federzoni
- Applicant Address: FR Paris
- Assignee: Commissariat a l'Energie Atomique
- Current Assignee: Commissariat a l'Energie Atomique
- Current Assignee Address: FR Paris
- Agency: Oliff & Berridge, PLC
- Priority: FR0802650 20080516
- Main IPC: B32B5/16
- IPC: B32B5/16 ; G11B11/105 ; H01R33/00 ; C30B1/00 ; C30B3/00 ; C30B5/00
Abstract:
A silicon wafer for a photovoltaic cell is produced by a debinding step of a self-supported film formed of at least one main thin layer comprising at least 50% volume of silicon particles, devoid of silicon oxide and encapsulated in a polymer matrix protecting them against oxidation, followed by a sintering step to form the silicon wafer.
Public/Granted literature
- US20090283875A1 Self-supported film and silicon wafer obtained by sintering Public/Granted day:2009-11-19
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