Invention Grant
- Patent Title: Granular perpendicular media interlayer for a storage device
- Patent Title (中): 用于存储装置的颗粒垂直介质夹层
-
Application No.: US12395619Application Date: 2009-02-27
-
Publication No.: US08110299B2Publication Date: 2012-02-07
- Inventor: Shoutao Wang , Weilu Xu , Chunghee Chang , Xiaoguang Ma , Mark Johnson , Abebe Hailu , Charles Chen
- Applicant: Shoutao Wang , Weilu Xu , Chunghee Chang , Xiaoguang Ma , Mark Johnson , Abebe Hailu , Charles Chen
- Applicant Address: US CA Scotts Valley
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Scotts Valley
- Main IPC: G11B5/66
- IPC: G11B5/66

Abstract:
An apparatus and method are provided for improving perpendicular magnetic recording media. The present invention provides media, and a method of fabricating media in a cost-effective manner, with a reduced ruthenium (Ru) content interlayer structure, while meeting media performance requirements. A perpendicular magnetic recording medium is provided comprising a non-magnetic substrate having a surface, and a layer stack situated on the substrate surface. The layer stack comprises, in overlying sequence from the substrate surface a magnetically soft underlayer; an amorphous or crystalline, non-magnetic seed layer; an interlayer structure for crystallographically orienting a layer of a perpendicular magnetic recording material situated on the underlayer; and at least one crystallographically oriented, magnetically hard, perpendicular magnetic recording layer situated on the interlayer structure. The interlayer structure is a stacked structure comprising, in overlying sequence: a chromium alloy situated on the seed layer; and an upper interlayer situated on the chromium alloy.
Public/Granted literature
- US20100221580A1 Granular Perpendicular Media Interlayer For A Storage Device Public/Granted day:2010-09-02
Information query
IPC分类: