A substrate treatment method including a first treatment process (S13 to S16) for exposing, heating, and developing a substrate on which a first resist is formed, thereby forming a first resist pattern, and a second treatment process (S17 to S20) for forming a second resist film on the substrate on which the first resist pattern is formed, exposing, heating, and developing the substrate on which the second resist film is formed, thereby forming a second resist pattern. Also, the substrate treatment method compensates a first treatment condition in a first treatment process (S22 to S25) based on a measured value of a line width of the second resist pattern and a second treatment condition in a second treatment process (S26 to S29) based on a measured value of a line width of the first resist pattern.