A method is disclosed for manufacturing a semiconductor device. The method includes: forming a substrate including a cell region and an outside region, wherein the outside region is adjacent to the cell region; forming a line-shaped pattern over the substrate using a first exposure mask so that the line-shaped spacer pattern extends from the cell region to the outside region; and patterning the line-shaped pattern in the cell region into a bar pattern while removing the line-shaped pattern in the outside region using a second exposure mask, wherein the line-shaped pattern can be formed using a spacer patterning technology (SPT) or a double pattern technology (DPT).