Invention Grant
US08110410B2 Nanofludic field effect transistor based on surface charge modulated nanochannel
有权
基于表面电荷调制纳米通道的纳米线性场效应晶体管
- Patent Title: Nanofludic field effect transistor based on surface charge modulated nanochannel
- Patent Title (中): 基于表面电荷调制纳米通道的纳米线性场效应晶体管
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Application No.: US12493811Application Date: 2009-06-29
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Publication No.: US08110410B2Publication Date: 2012-02-07
- Inventor: Hongbo Peng , Stanislav Polonsky , Stephen M. Rossnagel , Gustavo Alejandro Stolovitzky
- Applicant: Hongbo Peng , Stanislav Polonsky , Stephen M. Rossnagel , Gustavo Alejandro Stolovitzky
- Applicant Address: US NY Armonk
- Assignee: International Business Machines Corporation
- Current Assignee: International Business Machines Corporation
- Current Assignee Address: US NY Armonk
- Agent Michael J. Buchenhorner; Vazken Alexanian
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A field effect transistor device includes: a reservoir bifurcated by a membrane of three layers: two electrically insulating layers; and an electrically conductive gate between the two insulating layers. The gate has a surface charge polarity different from at least one of the insulating layers. A nanochannel runs through the membrane, connecting both parts of the reservoir. The device further includes: an ionic solution filling the reservoir and the nanochannel; a drain electrode; a source electrode; and voltages applied to the electrodes (a voltage between the source and drain electrodes and a voltage on the gate) for turning on an ionic current through the ionic channel wherein the voltage on the gate gates the transportation of ions through the ionic channel.
Public/Granted literature
- US20100327255A1 NANOFLUDIC FIELD EFFECT TRANSISTOR BASED ON SURFACE CHARGE MODULATED NANOCHANNEL Public/Granted day:2010-12-30
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