Invention Grant
US08110410B2 Nanofludic field effect transistor based on surface charge modulated nanochannel 有权
基于表面电荷调制纳米通道的纳米线性场效应晶体管

Nanofludic field effect transistor based on surface charge modulated nanochannel
Abstract:
A field effect transistor device includes: a reservoir bifurcated by a membrane of three layers: two electrically insulating layers; and an electrically conductive gate between the two insulating layers. The gate has a surface charge polarity different from at least one of the insulating layers. A nanochannel runs through the membrane, connecting both parts of the reservoir. The device further includes: an ionic solution filling the reservoir and the nanochannel; a drain electrode; a source electrode; and voltages applied to the electrodes (a voltage between the source and drain electrodes and a voltage on the gate) for turning on an ionic current through the ionic channel wherein the voltage on the gate gates the transportation of ions through the ionic channel.
Information query
Patent Agency Ranking
0/0