Invention Grant
US08110414B2 Forming integrated circuit devices with metal-insulator-metal capacitors using selective etch of top electrodes
有权
使用金属绝缘体金属电容器形成集成电路器件，使用顶部电极的选择性蚀刻
- Patent Title: Forming integrated circuit devices with metal-insulator-metal capacitors using selective etch of top electrodes
- Patent Title (中): 使用金属绝缘体金属电容器形成集成电路器件，使用顶部电极的选择性蚀刻
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Application No.: US12433042Application Date: 2009-04-30
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Publication No.: US08110414B2Publication Date: 2012-02-07
- Inventor: Marshall O. Cathey, Jr. , Pushpa Mahalingam , Weidong Tian , David C. Guiling , Xinfen Chen , Binghua Hu , Sopa Chevacharoenkul
- Applicant: Marshall O. Cathey, Jr. , Pushpa Mahalingam , Weidong Tian , David C. Guiling , Xinfen Chen , Binghua Hu , Sopa Chevacharoenkul
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent John R. Pessertto; W. James Brady; Frederick J. Telecky, Jr.
- Main IPC: H01L31/26
- IPC: H01L31/26 ; H01L21/66
Abstract:
A method of forming integrated circuits (IC) having at least one metal insulator metal (MIM) capacitor. A bottom electrode is formed on a predetermined region of a semiconductor surface of a substrate. At least one dielectric layer including silicon is formed on the bottom electrode, wherein a thickness of the dielectric layer is
Public/Granted literature
- US20100276783A1 SELECTIVE PLASMA ETCH OF TOP ELECTRODES FOR METAL-INSULATOR-METAL (MIM) CAPACITORS Public/Granted day:2010-11-04
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