Invention Grant
- Patent Title: Light emitting element array
- Patent Title (中): 发光元件阵列
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Application No.: US12961859Application Date: 2010-12-07
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Publication No.: US08110420B2Publication Date: 2012-02-07
- Inventor: Chao-Hsing Chen
- Applicant: Chao-Hsing Chen
- Applicant Address: TW Hsinchu
- Assignee: Epistar Corporation
- Current Assignee: Epistar Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Patterson & Sheridan, LLP
- Priority: TW98141859A 20091207
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A method of fabricating a light emitting diode array, comprising: providing a temporary substrate; forming a first light emitting stack and a second light emitting stack on the temporary substrate; forming a first insulating layer covering partial of the first light emitting stack; forming a wire on the first insulating layer and electrically connecting to the first light emitting stack and the second light emitting stack; forming a second insulating layer fully covering the first light emitting stack, the wire and partial of the second light emitting stack; forming a metal connecting layer on the second insulating layer and electrically connecting to the second light emitting stack; forming a conductive substrate on the metal connecting layer; removing the temporary substrate; and forming a first electrode connecting to the first light emitting stack.
Public/Granted literature
- US20110133219A1 LIGHT EMITTING ELEMENT ARRAY Public/Granted day:2011-06-09
Information query
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