Invention Grant
- Patent Title: Method of manufacturing semiconductor light-emitting device
- Patent Title (中): 制造半导体发光器件的方法
-
Application No.: US12970560Application Date: 2010-12-16
-
Publication No.: US08110423B2Publication Date: 2012-02-07
- Inventor: Takehiko Okabe
- Applicant: Takehiko Okabe
- Applicant Address: JP Tokyo
- Assignee: Showa Denko K.K.
- Current Assignee: Showa Denko K.K.
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JPP2009-287900 20091218
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L21/301

Abstract:
A method of manufacturing a semiconductor light-emitting device which includes the steps of forming a plurality of light-emitting device sections (40), having an approximately rectangular shape in plan view, on a substrate (10) in a matrix shape, forming a first dividing groove (61) between the long sides (41) of the light-emitting device sections (40) so that the long side (41) of the light-emitting device section (40) is along an easily cleaved plane of the substrate (10), forming a second dividing groove (62), having a larger width than the width of the first dividing groove (61), between short sides (42) of the light-emitting device sections (40), and dividing the substrate (10) along a first dividing groove (61) and a second dividing groove (62) to cut out the light-emitting device section (40).
Public/Granted literature
- US20110275172A1 Method of manufacturing semiconductor light-emitting device Public/Granted day:2011-11-10
Information query
IPC分类: