Invention Grant
US08110424B2 Surface treatment method of group III nitride semiconductor and manufacturing method of the group III nitride semiconductor
有权
III族氮化物半导体的表面处理方法和III族氮化物半导体的制造方法
- Patent Title: Surface treatment method of group III nitride semiconductor and manufacturing method of the group III nitride semiconductor
- Patent Title (中): III族氮化物半导体的表面处理方法和III族氮化物半导体的制造方法
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Application No.: US12419590Application Date: 2009-04-07
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Publication No.: US08110424B2Publication Date: 2012-02-07
- Inventor: Jong In Yang , Sang Bum Lee , Sang Yeob Song , Si Hyuk Lee , Tae Hyung Kim
- Applicant: Jong In Yang , Sang Bum Lee , Sang Yeob Song , Si Hyuk Lee , Tae Hyung Kim
- Applicant Address: KR Gyunggi-do
- Assignee: Samsung LED Co., Ltd.
- Current Assignee: Samsung LED Co., Ltd.
- Current Assignee Address: KR Gyunggi-do
- Agency: McDermott Will & Emery LLP
- Priority: KR10-2008-0100773 20081014
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
There is provided a surface treatment method of a group III nitride semiconductor including: providing a group III nitride semiconductor including a first surface having a group III polarity and a second surface opposing the first surface and having a nitrogen polarity; and irradiating a laser beam onto the second surface to change the nitrogen polarity of the second surface to the group III polarity.
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