Invention Grant
US08110429B2 Bridge resistance random access memory device and method with a singular contact structure
有权
桥接电阻随机存取存储器件及具有单一接触结构的方法
- Patent Title: Bridge resistance random access memory device and method with a singular contact structure
- Patent Title (中): 桥接电阻随机存取存储器件及具有单一接触结构的方法
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Application No.: US12558401Application Date: 2009-10-02
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Publication No.: US08110429B2Publication Date: 2012-02-07
- Inventor: ChiaHua Ho , Erh-Kun Lai , Kuang Yeu Hsieh
- Applicant: ChiaHua Ho , Erh-Kun Lai , Kuang Yeu Hsieh
- Applicant Address: TW Hsinchu
- Assignee: Macronix International Co., Ltd.
- Current Assignee: Macronix International Co., Ltd.
- Current Assignee Address: TW Hsinchu
- Agency: Haynes Beffel & Wolfeld LLP
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L45/00 ; H01L21/441
Abstract:
A resistance random access memory in a bridge structure is disclosed that comprises a contact structure where first and second electrodes are located within the contact structure. The first electrode has a circumferential extending shape, such as an annular shape, surrounding an inner wall of the contact structure. The second electrode is located within an interior of the circumferential extending shape and separated from the first electrode by an insulating material. A resistance memory bridge is in contact with an edge surface of the first and second electrodes. The first electrode in the contact structure is connected to a transistor and the second electrode in the contact structure is connected to a bit line. A bit line is connected to the second electrode by a self-aligning process.
Public/Granted literature
- US20100015757A1 BRIDGE RESISTANCE RANDOM ACCESS MEMORY DEVICE AND METHOD WITH A SINGULAR CONTACT STRUCTURE Public/Granted day:2010-01-21
Information query
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