Invention Grant
- Patent Title: Thermal method to control underfill flow in semiconductor devices
- Patent Title (中): 控制半导体器件底部填充流动的热法
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Application No.: US11463985Application Date: 2006-08-11
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Publication No.: US08110438B2Publication Date: 2012-02-07
- Inventor: Vikas Gupta , Jeremias Perez Libres , Joseph Edward Grigalunas
- Applicant: Vikas Gupta , Jeremias Perez Libres , Joseph Edward Grigalunas
- Applicant Address: US TX Dallas
- Assignee: Texas Instruments Incorporated
- Current Assignee: Texas Instruments Incorporated
- Current Assignee Address: US TX Dallas
- Agent Steven A. Shaw; W. James Brady; Frederick J. Telecky, Jr.
- Main IPC: H01L21/44
- IPC: H01L21/44

Abstract:
A method and apparatus for assembling a semiconductor device. A chip (901) with solder bodies (903) on its contact pads is flipped onto a substrate (904). After the reflow process, a gap (910) spaces chip and substrate apart. A polymer precursor is selected for its viscosity of known temperature dependence. The apparatus has a plate (800) with heating and cooling means to select and control a temperature profile from location to location across the plate. After preheating, the assembly is placed on a mesa (801) of the plate configured to heat only a portion of the substrate. Movable capillaries (840, 921) blow cooled gas onto selected locations of the assembly. After the temperature profile is reached, a quantity of the precursor is deposited at a chip side and pulled into the gap by capillary action. The capillary flow is controlled by controlling the precursor viscosity based on the temperature profile, resulting in a substantially linear front, until the gap is filled substantially without voids.
Public/Granted literature
- US20080038870A1 THERMAL METHOD TO CONTROL UNDERFILL FLOW IN SEMICONDUCTOR DEVICES Public/Granted day:2008-02-14
Information query
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