Invention Grant
- Patent Title: Method of manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US11819027Application Date: 2007-06-25
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Publication No.: US08110442B2Publication Date: 2012-02-07
- Inventor: Yasuhiro Jinbo
- Applicant: Yasuhiro Jinbo
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2006-182779 20060630
- Main IPC: H01L21/78
- IPC: H01L21/78
Abstract:
A method of manufacturing a thin TFT over a flexible substrate is provided. In formation of a TFT on a surface of a substrate having heat resistance, a liquid repellent film is formed selectively on a surface of the substrate, and an organic film is formed thereover. An element such as a TFT is formed over the organic film. Since the liquid repellent film is formed over the substrate, adhesion between the substrate and the organic film is low; therefore, the element which is formed can be peeled off from the substrate easily. Further, since the element is not transferred to another substrate, a semiconductor device which is thinner than conventional ones can be manufactured. In order to form the liquid repellent film selectively, light exposure of a front surface or a back surface of the substrate provided with a mask, a droplet discharging method, or the like is used.
Public/Granted literature
- US20080003727A1 Method of manufacturing semiconductor device Public/Granted day:2008-01-03
Information query
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