Invention Grant
US08110443B2 Semiconductor device and method of fabricating semiconductor device
有权
半导体器件及半导体器件的制造方法
- Patent Title: Semiconductor device and method of fabricating semiconductor device
- Patent Title (中): 半导体器件及半导体器件的制造方法
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Application No.: US12923982Application Date: 2010-10-19
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Publication No.: US08110443B2Publication Date: 2012-02-07
- Inventor: Kousaku Uoya
- Applicant: Kousaku Uoya
- Applicant Address: JP Kawasaki-shi, Kanagawa
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi, Kanagawa
- Agency: McGinn IP Law Group, PLLC
- Priority: JP2007-271178 20071018
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method of fabricating a semiconductor device from a semiconductor wafer, having external connecting terminals on one side of the semiconductor wafer and a cover layer on another side of the semiconductor wafer, includes forming a groove with a first width from the one side to at least an interface between the semiconductor wafer and the cover layer in the semiconductor wafer, and cutting the cover layer with a second width from a bottom side of the groove. The second width is narrower than the first width.
Public/Granted literature
- US20110039396A1 Semiconductor device and method of fabricating semiconductor device Public/Granted day:2011-02-17
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